Heating element CVD system and heating element CVD metod using the same
作者： Minoru Karasawa , Keiji Ishibashi , Masahiko Tanaka
DOI:
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摘要: A heating element CVD system and a method which are capable of forming high quality polycrystalline silicon film (polysilicon film) as device in the case producing by using system. The heat maintain inner surface structure surrounding space between substrate holder to be at least 200° C. or higher, preferably 350° higher during formation on substrate.
google.de 参考文章(23)
Chang-Jae Kim, Temperature controllable gas distributor ,(2000)
Yosuke Ide, Shinichi Inaba, Method and apparatus for loading substrate in semiconductor manufacturing apparatus ,(2001)
Osamu Okada, Tomoaki Koide, Ko Sang Tae, Atsushi Sekiguchi, Akiko Kobayashi, Method of cleaning metallic films built up within thin film deposition apparatus ,(1998)
Karl A. Littau, Ken Kaung Lai, Bevan Vo, Son N. Trinh, Salvador P. Umotoy, Bo Zheng, Ping Jian, Anzhong Chang, Siqing Lu, Chien-Teh Kao, Showerhead with reduced contact area ,(2000)
Akiko Kagatsume, Tadanori Yoshida, Tomoji Watanabe, Process for producing semiconductor and apparatus for production ,(2002)
Anthony S. Geller, Daniel J. Rader, Particle-free microchip processing ,(1994)
Hisayoshi Yamoto, Hideo Yamanaka, Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device ,(2000)
Fred C. Redeker, Robert J. Steger, Apparatus and method for cleaning of semiconductor process chamber surfaces ,(1996)
Gurtej S. Sandhu, Sujit Sharan, Ravi Iyer, Apparatus and method to increase gas residence time in a reactor ,(1996)
Quanyuan Shang, Dan Maydan, Robert McCormick Robertson, Kam S. Law, Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology ,(1997)