Integrated polarization rotator on silicon waveguides with an asymmetric trench

作者: Yudeuk Kim , Dong Wook Kim , Moon Hyeok Lee , Min Hee Lee , Dong Eun Yoo

DOI: 10.1109/CLEOPR.2015.7376557

关键词:

摘要: We demonstrate an integrated polarization rotator with a single trench on silicon waveguide fabricated using etch-step complementary metal-oxide-semiconductor (CMOS)-compatible process. The measured rotation efficiency is 95 % 0.76 dB insertion loss for total 67-μm long and 100-nm wide asymmetric trench.

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