作者: Yudeuk Kim , Dong Wook Kim , Moon Hyeok Lee , Min Hee Lee , Dong Eun Yoo
DOI: 10.1109/CLEOPR.2015.7376557
关键词:
摘要: We demonstrate an integrated polarization rotator with a single trench on silicon waveguide fabricated using etch-step complementary metal-oxide-semiconductor (CMOS)-compatible process. The measured rotation efficiency is 95 % 0.76 dB insertion loss for total 67-μm long and 100-nm wide asymmetric trench.