Ultra-compact and fabrication-tolerant polarization rotator based on a bend asymmetric-slab waveguide.

摘要: We propose and analyze a polarization rotator based on bend asymmetric-slab waveguide the silicon-on-insulator platform. The device can be fabricated using standard complementary metal-oxide-semiconductor process involving only two dry etching steps. Compared with formerly reported rotators two-step etching, our introduced demonstrates significant improvement for fabrication tolerance. Furthermore, an ultra compact structure of ~5 μm conversion length, insertion loss 0.5 dB, extinction ratio >40 dB both TE to TM are exhibited. Operation wavelength influence environmental temperature also discussed.