Demonstration of integrated polarization rotator based on an asymmetric silicon waveguide with a trench

摘要: An integrated polarization rotator is demonstrated experimentally by forming a strip waveguide with an asymmetric trench on silicon-on-insulator wafer. The located asymmetrically in the waveguide. It induces evolution of orthogonal mode upon linearly polarized beam input, and thus causes rotation. device fabricated using conventional complementary metal oxide semiconductor process single dry etching step. shows maximum transverse electric (TE)-to-transverse magnetic (TM) conversion efficiency 21.3 dB insertion loss −0.95 at 1550 nm wavelength length 67 μm. exhibits 21.1 −2.12 dB, respectively, for TM-to-TE conversion. optimum parameters size are investigated performing numerical simulations, demonstrating experimental fabrication measurement.