Study on the etching damage characteristics of PZT thin films after etching in Cl-based plasma

摘要: In present work, we carried out the investigations of plasma-induced etching damage for PZT thin films etched using various Cl-based gas chemistries. The basic mixture was Cl2/CF4 (8/2) while Ar or O2 were used as additive gases (up to 20%). It found that in Cl2/CF4/Ar plasma provides higher a rate but degrades remnant polarization more compared with Cl2/CF4/O2 plasma. X-ray photoelectron spectroscopy showed contamination surfaces by ZrClx both mixtures. Auger electron and diffraction analyses show significant damage, which cannot be recovered annealing. For plasma, annealing under atmosphere helps restore ferroelectric properties resulting good recovering polarization.