SiO2+SiC reaction at elevated temperatures. Part 1.—Kinetics and mechanism
作者： W. W. Pultz , W. Hertl
DOI: 10.1039/TF9666202499
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摘要: The reaction between finely divided SiO2 and SiC at 1270–1430°C was studied. scheme proposed is: 2SiC+SiO2= 3Sia+2COa 2Sia+CO = SiOa+SiC Sia+SiO2= 2SiOa Sia, SiOa, COa= Sig, SiOg COg. During the first 2–6% of reaction, Si volatilizes; thereafter primarily SiO CO volatilize. Only upper layers charge contribute to net forward rate, hence state reactant subdivision is secondary importance. An Arrhenius plot in vacuo gives an apparent activation energy 131–97 kcal/mole range 1270–1430°C. rate-determining step desorption products from surface.
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