Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's
作者： Meng-Nian Niu , Xin-Fang Ding , Qin-Yi Tong
DOI: 10.1109/SMELEC.1996.616480
关键词:
摘要: Based on the site-binding model, effects of two types surface-sites (namely, silanol site and amine site) their ratio characteristics Si/sub 3/N/sub 4/-gate pH-ISFET are discussed. As /spl beta/ sites to is about 7/3, maximum sensitivity electrolyte-insulator (E-I) interfacial potential versus pH value, as well range linear response theoretically obtained. The stability devices partially determined by total number ratio. theoretical results supported experimental results.
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