Dielectric function and electric properties of germanium thin films prepared by gold mediated crystallization
作者： Maria M. Giangregorio , Maria Losurdo , Marianna Ambrico , Pio Capezzuto , Giovanni Bruno
DOI: 10.1063/1.2180407
关键词:
摘要: Crystallization of hydrogenated amorphous germanium (a‐Ge:H) thin films deposited by plasma enhanced chemical vapor deposition using the GeH4 and H2 precursors has been investigated. A comparative analysis kinetics thermal crystallization annealing to 650°C gold-mediated (Au-MMC) is carried out. The impact Au-MMC on microcrystalline Ge film microstructure electrical properties discussed. Au layer results in a more dense ordered structure with lower roughness films. In order describe kinetics, dielectric functions a‐Ge:H μc‐Ge have also determined spectroscopic ellipsometry range 0.75−6.0eV parametrized Tauc-Lorentz dispersion equation.
scitation.org
aip.org
sci-hub.se 参考文章(33)
Hou Jian-guo, Wu Zi-qin, Temperature dependence of fractal formation in ion-implanted a-Ge/Au bilayer thin films Physical Review B. ,vol. 40, pp. 1008- 1012 ,(1989) , 10.1103/PHYSREVB.40.1008
G.E. Jellison, Jr, Spectroscopic ellipsometry data analysis : measured versus calculated quantities Thin Solid Films. pp. 33- 39 ,(1998) , 10.1016/S0040-6090(97)00765-7
Fumiya Oki, Yoshio Ogawa, Yoshibumi Fujiki, Effect of Deposited Metals on the Crystallization Temperature of Amorphous Germanium Film Japanese Journal of Applied Physics. ,vol. 8, pp. 1056- 1056 ,(1969) , 10.1143/JJAP.8.1056
G. Khlyap, P. Sydorchuk, Growth and Electrical Properties of New Semiconductor Compound ZnCdHgTe Crystal Research and Technology. ,vol. 36, pp. 1027- 1034 ,(2001) , 10.1002/1521-4079(200110)36:8/10<1027::AID-CRAT1027>3.0.CO;2-C
G. E. Jellison, F. A. Modine, Parameterization of the optical functions of amorphous materials in the interband region Applied Physics Letters. ,vol. 69, pp. 371- 373 ,(1996) , 10.1063/1.118064
G. E. Jellison, F. A. Modine, Erratum: ‘‘Parameterization of the optical functions of amorphous materials in the interband region’’ [Appl. Phys. Lett. 69, 371 (1996)] Applied Physics Letters. ,vol. 69, pp. 2137- 2137 ,(1996) , 10.1063/1.118155
D.E. Aspnes, Optical properties of thin films Thin Solid Films. ,vol. 89, pp. 249- 262 ,(1982) , 10.1016/0040-6090(82)90590-9
Akira Sugawara, Takashi Kikukawa, Osamu Nittono, Growth dynamics of fractal Ge clusters during crystallization of amorphous phase on polycrystalline Au layer Materials Science and Engineering A-structural Materials Properties Microstructure and Processing. pp. 355- 360 ,(1994) , 10.1016/0921-5093(94)90226-7
Tülay Serin, Necmi Serin, Effect of reverse-bias annealing on thermal equilibrium changes in hydrogenated amorphous germanium Semiconductor Science and Technology. ,vol. 14, pp. 1048- 1051 ,(1999) , 10.1088/0268-1242/14/12/306
S.R. Herd, P. Chaudhari, M.H. Brodsky, Metal contact induced crystallization in films of amorphous silicon and germanium Journal of Non-crystalline Solids. ,vol. 7, pp. 309- 327 ,(1972) , 10.1016/0022-3093(72)90267-0