Air gap interconnect structure and method
作者： Grant M. Kloster , Hyun-Mog Park
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摘要: A low-k dielectric sacrificial material is formed within a microelectronic structure covered with layer defining an exhaust vent. At appropriate time, the underlying decomposed and exhausted away through Residue from accumulates at vent location during exhaustion until substantially occluded. As result, air gap created having desirable characteristics as dielectric.
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