Multilayer interconnect structure containing air gaps and method for making
作者： Christopher Vincent Jahnes , Sampath Purushothaman , Jeffrey Curtis Hedrick , Katherina E. Babich , Timothy Joseph Dalton
DOI:
关键词: Electronic engineering 、 Optoelectronics 、 Line (electrical engineering) 、 Dielectric 、 Structure (category theory) 、 Copper interconnect 、 Composite number 、 Interconnection 、 Materials science
摘要: A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and composite plus air-gap levels. Also provided method for forming such an structure. The readily scalable to structures containing multiple compatible with Dual Damascene Back End of Line (BEOL) processing.
google.co.uk参考文章(41)
Lap Chan, Cher Liang Cha, Kok Keng Ong, Kheng Chok Tee, Formation of low k dielectric ,(1999)
Kenneth P. Stuby, James J. Honn, Electrical package for lsi devices and assembly process therefor ,(1974)
Amitava Chatterjee, Girish A. Dixit, Somnath S. Nag, Air-bridge integration scheme for reducing interconnect delay ,(1999)
Robert H. Havemann, Shin-puu Jeng, Multilevel interconnect structure with air gaps formed between metal leads ,(1994)
Thomas E. Seidel, Ronald S. Horwath, Peter M. Zeitzoff, Bin Zhao, Prahalad K. Vasudev, Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer ,(1997)
Brian Doyle, Quat T. Vu, Leopold Yau, Capping layer in interconnect system and method for bonding the capping layer onto the interconnect system ,(1998)
Jr. Joseph A. McKenzie, Self-masking socket pin carrier for printed circuit boards ,(1981)
Warren M. Farnworth, Alan G. Wood, Salman Akram, Method for fabricating a semiconductor interconnect with laser machined electrical paths through substrate ,(1997)