Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions
作者： P. Khalili Amiri , Z. M. Zeng , J. Langer , H. Zhao , G. Rowlands
DOI: 10.1063/1.3567780
关键词:
摘要: We present in-plane CoFeB–MgO magnetic tunnel junctions with perpendicular anisotropy in the free layer to reduce spin transfer induced switching current. The tunneling magnetoresistance ratio, resistance-area product, and current densities are compared different CoFeB compositions. effects of thickness on its current-induced characteristics studied by vibrating sample magnetometry electrical transport measurements patterned elliptical nanopillar devices. Switching ∼4 MA/cm2 obtained at 10 ns write times.
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