Surface states and barrier heights of metal-amorphous silicon schottky barriers
作者： C.R. Wronski , D.E. Carlson
DOI: 10.1016/0038-1098(77)90999-1
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摘要: Abstract The barrier heights, φB, of Schottky barriers formed between Al, Ni, Cr, Pd, Au, Rh, and Pt metal films undoped discharge-produced amorphous silicon (a-Si) have been measured. dependence φB on the work function, φM, has characterized for values φM ≈4.0 5.5 eV. Experiments were performed to compare effects surface states both (n-type) n-type single crystal Si. These are very similar, indicating similar densities energy distributions states. a-Si found be ≳1013cm−2eV−1 which result in pinning ≳0.7 eV even with as low 4.0
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