Low-K bands in 176Hf populated in the (α, 2n) reaction

作者: T.L. Khoo , J.C. Waddington , Z. Preibisz , M.W. Johns

DOI: 10.1016/0375-9474(73)90225-X

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摘要: Abstract Levels in 176 Hf have been studied by the 174 Yb(α, 2n) reaction. The observation of γ-rays both singles and coincidence experiments, measurement internal conversion coefficients many these transitions has led to assignment eleven rotational bands. Those bands with low K are discussed this paper. They ground state band, a π = 0 + band at 1150 keV,a 2 − 1247.5 keV, third 1293 1341.1 finally 3 1577.3 keV. properties will be discussed. In particular, suggested explanation for unusual decay pattern presented.

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