Glow discharge preparation of amorphous hydrogenated silicon from higher silanes
作者： B. A. Scott , M. H. Brodsky , D. C. Green , P. B. Kirby , R. M. Plecenik
DOI: 10.1063/1.92059
关键词:
摘要: Amorphous hydrogenated silicon has been deposited by plasma decomposition of Si2H6 and Si3H8. A major feature the process is a deposition rate enhancement over factor 20 compared to monosilane. The resulting films are compositionally similar monosilane‐produced intrinsic a‐Si(H), but at 300 °C substrate temperature show greater photoconductivity. On basis our experiments known thermolysis chemistry silanes, conjectural model for presented.
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