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Charakterystyka tranzystorów z węglika krzemu w wysokosprawnych przekształtnikach
作者:
M. Adamowicz
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参考文章
(12)
1.
Zbigniew Krzemiński, Sebastian Giziewski, Marek Adamowicz, Mariusz Rutkowski, Jędrzej Pietryka,
Układy sterowania bramkowego tranzystorów z węglika krzemu SiC JFET w falownikach napięcia
Przegląd Elektrotechniczny.
pp. 1- 6 ,(2012)
2.
Sebastian Giziewski,
Wysokoczęstotliwościowy przekształtnik z tranzystorami SiC JFET
Przegląd Elektrotechniczny.
pp. 287- 290 ,(2012)
3.
J. Rąbkowski, M. Zdanowski, R. Barlik,
Sterownik bramkowy dla tranzystorów SiC pracujących w układzie mostka
Elektronika : konstrukcje, technologie, zastosowania.
,vol. 53, pp. 76- 79 ,(2012)
4.
Andrew Lemmon, Michael Mazzola, James Gafford, Chris Parker,
Stability Considerations for Silicon Carbide Field-Effect Transistors
IEEE Transactions on Power Electronics.
,vol. 28, pp. 4453- 4459 ,(2013) ,
10.1109/TPEL.2012.2226473
5.
Diane-Perle Sadik, Juan Colmenares, Dimosthenis Peftitsis, Jang-Kwon Lim, Jacek Rabkowski, Hans-Peter Nee, None,
Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs
european conference on power electronics and applications.
pp. 1- 10 ,(2013) ,
10.1109/EPE.2013.6634432
6.
Jonas E. Huber, Johann W. Kolar,
Optimum number of cascaded cells for high-power medium-voltage multilevel converters
energy conversion congress and exposition.
pp. 359- 366 ,(2013) ,
10.1109/ECCE.2013.6646723
7.
Andrew Lemmon, Michael Mazzola, James Gafford, Christopher Parker,
Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors
IEEE Transactions on Power Electronics.
,vol. 29, pp. 2380- 2392 ,(2014) ,
10.1109/TPEL.2013.2273275
8.
Marek Adamowicz, Ryszard Strzelecki, Zbigniew Krzeminski,
Hybrid high-frequency-SiC and line-frequency-Si based PEBB for MV modular power converters
conference of the industrial electronics society.
pp. 5197- 5202 ,(2012) ,
10.1109/IECON.2012.6388970
9.
Niall Oswald, Philip Anthony, Neville McNeill, Bernard H. Stark,
An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations
IEEE Transactions on Power Electronics.
,vol. 29, pp. 2393- 2407 ,(2014) ,
10.1109/TPEL.2013.2278919
10.
Marek Adamowicz, Sebastian Giziewski, Jedrzej Pietryka, Zbigniew Krzeminski,
Performance comparison of SiC Schottky diodes and silicon ultra fast recovery diodes
2011 7th International Conference-Workshop Compatibility and Power Electronics (CPE).
pp. 144- 149 ,(2011) ,
10.1109/CPE.2011.5942222
来源期刊
Automatyka, Elektryka, Zakłócenia
2014 年,
Volume: , Issue: ,
Page: 60-72
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