Performance comparison of SiC Schottky diodes and silicon ultra fast recovery diodes
作者： Marek Adamowicz , Sebastian Giziewski , Jedrzej Pietryka , Zbigniew Krzeminski
关键词: Power electronics 、 Gate driver 、 Optoelectronics 、 Diode 、 Power semiconductor device 、 Materials science 、 Silicon carbide 、 Schottky diode 、 p–n junction 、 Electronic circuit
摘要: … voltage spike due to snappy recovery [3]. The snap-off in the Si Ultrafast diode causes oscillations in … Excessive voltage spikes during turn-off process even can destroy the diode. These …
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