EMI comparison between Si and SiC technology in a boost converter
作者： Paco Bogonez-Franco , Josep Balcells Sendra
DOI: 10.1109/EMCEUROPE.2012.6396739
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摘要: In this paper we present a comparison of the EMI generated by dc-dc boost converter, using silicon (Si) or silicon-carbide (SiC) diodes and/or MOSFET. was compared Si technology as reference. The parameters were switching times, and conducted radiated EMI. shows that use SiC diode has great influence on MOSFET combined with reduces converter.
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sci-hub.se 参考文章(6)
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