Ion beam induced dissolution and precipitation of in situ formed Si-nanostructures in a-SiNx:H matrix
作者： Sarab Preet Singh , Santanu Ghosh , G. Vijaya Prakash , Saif A. Khan , D. Kanjilal
DOI: 10.1016/J.NIMB.2012.01.034
关键词:
摘要: Abstract We report here the response of in situ formed Si-nanostructures embedded Si-rich hydrogenated amorphous silicon nitride matrix to 100 MeV Ni8+ ions irradiation under normal incidence at room temperature. Prior irradiation, are nature having partial crystallinity. Irradiation with a fluence 5 × 1012 ions/cm2 leads dissolution Si-nanostructures. Nevertheless, relatively higher 1 × 1014 ions/cm2 enhances nucleation and formation The results understood on basis intense electronic energy loss induced hydrogen desorption consequent rearrangement network thermal spike formalism ion–material interaction.
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