Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation.
作者： I V Antonova , A G Cherkov , V A Skuratov , M S Kagan , J Jedrzejewski
DOI: 10.1088/0957-4484/20/18/185401
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摘要: Modification of films containing Si nanocrystallites embedded in SiO2 by irradiation with high-energy ions was found to induce peaks their low-frequency capacitance?voltage characteristics. Considering the nanocrystallite spatial distribution that follows ion tracks we interpret these as due charge transfer along tracks, similar process reported previously for two-dimensional arrays such crystallites. The above three-dimensional system appears be useful then fabrication nanostructures, which have also properties low-dimensional arrays.
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