Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories
作者： Prakaipetch Punchaipetch , Kazunori Ichikawa , Yukiharu Uraoka , Takashi Fuyuki , Atsushi Tomyo
DOI: 10.1116/1.2198852
关键词:
摘要: The effect of tunnel layer thicknesses on the charging/discharging mechanism and data retention Si nanocrystal dot floating gate devices was studied. Floating memories nanocrystals dots with three different SiO2 were fabricated, key variable being oxide thickness. Other parameters which can affect memory properties carefully controlled. electron discharging is discussed based differences in Direct tunneling found to predominate cases 3- 5-nm-thick layers. However, Fowler-Nordheim affects characteristics thicker Clear peak could be observed capacitance-voltage measurements metal-oxide semiconductors nanodot devices. Memory also depended strongly
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(12)
Wen-Tai Lu, Po-Ching Lin, Tiao-Yuan Huang, Chao-Hsin Chien, Ming-Jui Yang, Ing-Jyi Huang, Peer Lehnen, The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode Applied Physics Letters. ,vol. 85, pp. 3525- 3527 ,(2004) , 10.1063/1.1808228
Sandip Tiwari, Farhan Rana, Kevin Chan, Leathen Shi, Hussein Hanafi, Single charge and confinement effects in nano-crystal memories Applied Physics Letters. ,vol. 69, pp. 1232- 1234 ,(1996) , 10.1063/1.117421
Hiroya Kirimura, Kiyoshi Kubota, Eiji Takahashi, Shigeaki Kishida, Kiyoshi Ogata, Yukiharu Uraoka, Takashi Fuyuki, Low-Temperature Microcrystalline Silicon Film Deposited by High-Density and Low-Potential Plasma Technique Using Hydrogen Radicals Japanese Journal of Applied Physics. ,vol. 43, pp. 7929- 7933 ,(2004) , 10.1143/JJAP.43.7929
K. S. Min, K. V. Shcheglov, C. M. Yang, Harry A. Atwater, M. L. Brongersma, A. Polman, THE ROLE OF QUANTUM-CONFINED EXCITONS VS DEFECTS IN THE VISIBLE LUMINESCENCE OF SIO2 FILMS CONTAINING GE NANOCRYSTALS Applied Physics Letters. ,vol. 68, pp. 2511- 2513 ,(1996) , 10.1063/1.115838
M. Kanoun, A. Souifi, T. Baron, F. Mazen, Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications Applied Physics Letters. ,vol. 84, pp. 5079- 5081 ,(2004) , 10.1063/1.1751227
Sandip Tiwari, Farhan Rana, Hussein Hanafi, Allan Hartstein, Emmanuel F. Crabbé, Kevin Chan, A silicon nanocrystals based memory Applied Physics Letters. ,vol. 68, pp. 1377- 1379 ,(1996) , 10.1063/1.116085
S Lombardo, S Coffa, C Bongiorno, C Spinella, E Castagna, A Sciuto, C Gerardi, F Ferrari, B Fazio, S Privitera, Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2 Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 69, pp. 295- 298 ,(2000) , 10.1016/S0921-5107(99)00290-1
X. B. Lu, P. F. Lee, J. Y. Dai, Synthesis and memory effect study of Ge nanocrystals embedded in LaAlO3 high-k dielectrics Applied Physics Letters. ,vol. 86, pp. 203111- ,(2005) , 10.1063/1.1926414
Minoru Fujii, Shinji Hayashi, Keiichi Yamamoto, Growth of Ge Microcrystals in SiO2Thin Film Matrices: A Raman and Electron Microscopic Study Japanese Journal of Applied Physics. ,vol. 30, pp. 687- 694 ,(1991) , 10.1143/JJAP.30.687
Prakaipetch Punchaipetch, Kazunori Ichikawa, Yukiharu Uraoka, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata, Effect of SiO2 tunnel oxide thickness on electron tunneling mechanism in Si nanocrystal dots floating-gate memories Japanese Journal of Applied Physics. ,vol. 45, pp. 3997- 3999 ,(2006) , 10.1143/JJAP.45.3997