Temperature dependence of atomic ordering and composition modulation in InAsSbBi grown by molecular beam epitaxy on GaSb substrates
作者： R.R. Kosireddy , S.T. Schaefer , P.T. Webster , M.S. Milosavljevic , S.R. Johnson
DOI: 10.1016/J.JALLCOM.2020.157860
关键词:
摘要: Abstract The structural and optical properties of two 210 nm thick InAsSbBi epilayers grown on (100) GaSb substrates by molecular beam epitaxy at 400 280 °C are investigated using X-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, photoluminescence spectroscopy. Both samples free observable defects. higher temperature growth results in reduced Bi incorporation, good performance, smooth interfaces, lateral composition modulation the mole fraction. lower near unity poor interface roughness, CuPtB -type atomic ordering {111}B planes.
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