A broadband 800 GHz Schottky balanced doubler
作者： G. Chattopadhyay , E. Schlecht , J. Gill , S. Martin , A. Maestrini
DOI: 10.1109/7260.993286
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摘要: A broadband planar Schottky balanced doubler at 800 GHz has been designed and built. The design utilizes two diodes in a configuration on 12 /spl mu/m thick gallium arsenide (GaAs) substrate as supporting frame. This (designed for 735 to 850 GHz) uses split waveguide block relatively simple, fast, robust assembly procedure. achieved ap/10% efficiency 765 GHz, giving 1.1 mW of peak output power when pumped with about 9 input room temperature.
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