Characterization of Atomic Layer Deposited WN x C y Thin Film as a Diffusion Barrier for Copper Metallization
作者： Soo-Hyun Kim , Su Suk Oh , Hyun-Mi Kim , Dae-Hwan Kang , Ki-Bum Kim
DOI: 10.1149/1.1652054
关键词:
摘要: The film properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6 ,N H 3, and triethylboron source gases were characterized as diffusion barrier for Cu metallization. It is noted that the as-deposited shows an extremely low resistivity about 350 µΩ-cm with a density 15.37 g/cm 3 . composition measured from Rutherford backscattering spectrometry W, C, N approximately 48, 32, 20 at.%, respectively. Transmission electron microscopy analyses show composed face-centered-cubic phase lattice parameter similar to both β-WC1-x βW2N equiaxed microstructure. property this ALD-WNxCy at nominal thickness 12 nm between Si fails only after annealing 700 o Cf or 30 minutes while sputter-deposited Ta (12 nm) ALD-TiN (20 fail 650 600 thought superior performance ALD-WNxCyfilm consequence nanocrystalline grain structure formation high film.
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