TaC as a diffusion barrier between Si and Cu
作者： Tomi Laurila , Kejun Zeng , Jorma K. Kivilahti , Jyrki Molarius , Iikka Suni
DOI: 10.1063/1.1464652
关键词:
摘要: The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been studied experimentally theoretically by utilizing ternary Si–Ta–C Ta–C–Cu phase diagrams as well activity calculated at 800 °C. With help of sheet resistance measurements, Rutherford backscattering spectrometry, x-ray diffraction, scanning electron microscopy, transmission structure with 70 nm thick TaC barrier layer was observed to fail completely temperatures above 725 °C because formation large Cu3Si protrusions. However, amorphous Ta containing significant amounts carbon oxygen already TaC/Cu interface 600 °C. This also constituted an additional for Cu diffusion, which occurred only after crystallization layer. Ta2O5 indicating that rich h...
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