A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing
作者： John DeBrosse , Thomas Maffitt , Yutaka Nakamura , Guenole Jan , Po-Kang Wang
DOI: 10.1109/CICC.2015.7338359
关键词:
摘要: Spin Transfer Torque Magnetoresistive RAM (STT MRAM) has uniquely attractive write performance and endurance characteristics. Nonetheless, little STT MRAM circuit hardware data been published [1-4]. This paper describes a fully-functional 90nm 8Mb MRAM, identifies solutions to the primary challenges, includes considerable data.
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