作者: So Youn Kim , Jessica Gwyther , Ian Manners , Paul M. Chaikin , Richard A. Register
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摘要: Highly selective etch masks are formed by thin films of a polystyrene-b-poly(ferrocenylisopropylmethylsilane) diblock copolymer, PS-PFiPMS, containing hemicylindrical domains PFiPMS. These domains, with period 35 nm, readily aligned through mechanical shear. Aligned PS-PFiPMS templates employed to fabricate high-aspect-ratio nanowire grids from amorphous silicon, which can polarize deep ultraviolet radiation, including 193 at >90% efficiency.