作者: Mi Jung , Sun-il Mho , Hong Lee Park
DOI: 10.1063/1.2191424
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摘要: Long-range-ordered CdTe nanodot arrays with controlled size and density were grown on GaAs substrates by using molecular-beam epitaxy ultrathin nanoporous alumina masks. The CdTe∕GaAs as replicas of the self-assembled porous masks in spite large lattice mismatch between CdTe. Using (ca. 200nm thickness), we fabricated uniform dot sizes ranges 35nm (with a ∼2.5×1010cm−2) 80nm ∼8.1×109cm−2). This is report controlling both II-VI/III–V heterostructure semiconductor nanodots.