作者: D. U. LEE , J. H. JUNG , T. W. KIM , H. S. LEE , H. L. PARK
DOI: 10.1142/S0218625X07010202
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摘要: CdTe thin films were grown on GaAs(100) substrates by using molecular beam epitaxy at various temperatures. The results of the X-ray diffraction (XRD) patterns showed that orientation was (100) orientation. XRD patterns, atomic force microscopy images, high-resolution transmission electron (HRTEM) and photoluminescence spectra crystallinity CdTe(100) epilayers improved increasing substrate temperature. HRTEM images misfit dislocations existed CdTe/GaAs heterointerface. These can help improve understanding temperature effect structural optical properties CdTe(100)/GaAs(100) heterostructures.