Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness-dependent deformation potential
作者： Sujin Choi , Wookyung Sun , Hyungsoon Shin
DOI: 10.1088/0268-1242/30/4/045009
关键词:
摘要: The stress effect in uniaxially strained single- and double-gate silicon-on-insulator n-type metal oxide-semiconductor field transistors (MOSFETs) with a (100) wafer orientation is analyzed. A model of silicon-thickness-dependent deformation potential introduced to accurately calculate the mobility using Schr?dinger?Poisson solver. Simulation results exhibit excellent agreement measured for both unstrained conditions. Electron enhancements longitudinal transverse tensile conditions are simulated as function silicon thickness. enhancement single-gate case has one peak point, whereas it produces two points case. An in-depth analysis reveals that this phenomenon from hump energy difference between ?2 ?4 valleys, which turn volume inversion double gate.
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