A 1D numerical model for rapid stress analysis in bipolar junction transistors

摘要: Stress effects in semiconductor devices have gained significant attention industry recent years, and numerical modeling is often used as a powerful tool for stress analysis devices. Here, we present nontraditional 1D model fast bipolar junction transistors. Because transistors are operationally devices, it possible to speed up the simulation with get results that comparable 2D 3D outcomes. This consists of complete algorithm can be on any plane. Existing simulators take more time they solve all device equations throughout device. In contrast, our optimizes solutions different regions development inclusion specific algorithms. A fractional starting point introduced depletion region process further. way, faster computing much higher accuracy reached. At same time, popular simulators, which using finite element methods, naturally slower, especially if high needed. Simulation this match well developed commercial technology computer aided design TCAD tool. The validity was verified experimental theoretical expectations well. Copyright © 2016 John Wiley & Sons, Ltd.