Very High Speed Static Induction Thyristor
作者： Yoshio Nakamura , Hiroshi Tadano , Mitsuharu Takigawa , Isemi Igarashi , Jun-Ichi Nishizawa
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摘要: Characteristics of a newly developed static induction thyristor (SIThy) are described. The SIThy is irradiated by 2-MeV protons to improve the switching speed as result local carrier lifetime control. characteristics proton controlled annealing conditions obtain devices for various applications. very high; example, at an anode current 50 A, its rise time, storage and fall time 100 ns, 60 respectively. Thus suitable high-speed devices.
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