Method of manufacture of an epitaxial semiconductor layer on an insulating substrate

摘要: A thin epitaxial layer of silicon is disposed on a supporting substrate and oxide or other suitable formed the layer. The substrate, sandwich bonded by simultaneous application heat voltaic pressure to another oxidized such that sandwiched between two substrates with at interface. Alternatively, may be joined bonding without use placing (parent supporting) approximately 900° C. processed remove substantial portion final being removed etching. When etching, exposing layer, etching rate changes dramatically this reflected in byproduct concentration etchant solution. process immediately terminated when fully exposed. After further finishing steps, resulting product method an monocrystalline high crystalline perfection, separated from substrate.