Multilevel integrated circuits employing fused oxide layers

摘要: A multilevel semiconductor integrated circuit is fabricated by providing a plurality of substrates having an epitaxial layer on one surface and silicon oxide the layer. The are sequentially stacked with layers in contact fused together. One substrate retained as support, other removed etching after fusion layers, thereby leaving only separated oxide. structure facilitates vertical fabrication CMOS transistor pairs sharing common gate electrode between two transistors. Electrical isolation provided or removing some forming void adjacent layers. Circuit devices readily interconnected conductive vias