Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier

摘要: An Ir—M—O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes variety refractory metals. The Ir combination resistant to high temperature annealing oxygen environments. When used with underlying barrier layer made from the same transition metals, resulting conductive also suppresses diffusion into any Si substrates. As result, silicide products are not formed, which degrade interface characteristics. That is, remains conductive, peeling or hillocks, during processes, even oxygen. electrode/barrier structures nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, switches, piezoelectric transducers, and surface acoustic wave devices. A method for provided.