作者: Lixia Xu , Yoshio Arai , Wakako Araki , Takahiro Ogawa , Kazunari Ozasa
DOI: 10.1116/1.3628632
关键词:
摘要: An improved ability to estimate locations of embedded InGaAs/GaAs quantum dots (QDs) was demonstrated by using a domed-apex probe measure low-temperature (10 K) photoluminescence (PL) during nanoprobe scan. Individual QDs subjected nanoprobe-induced strain exhibited enhanced fine PL peaks. emission results were used trace single the positions where their peak energies achieved maximum values.