Estimation of the location of embedded InGaAs/GaAs quantum dots by measuring strain-induced blueshift of photoluminescence
作者： Lixia Xu , Yoshio Arai , Kazunari Ozasa , Hiroki Kakoi , Yuan-Hua Liang
DOI: 10.1016/J.PHYSE.2010.05.031
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摘要: Abstract A method was proposed to estimate the location of embedded InGaAs/GaAs quantum dots (QDs) as distance from center a flat cylindrical nanoprobe radius 600 nm, by measuring blueshift photoluminescence (PL) under elastic indentation onto sample surface. The energy enhanced fine PL peaks originating single QD observed linearly with force. peak shift per unit force, i.e., rate, measured in range 22.7–87.8 meV/mN. Analyzing nanoprobe-induced strain and ground state QD, based on numerical simulation, provided quantitative relationship between rate QD’s probe center. With this relationship, we succeeded estimating QDs experimentally obtained rate. were determined be located around edge, which coincides observation that only emitted edge is observable indentation. presented paper provides reliable simple way respect
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