Quantitative analysis of field-ion micrographs using moiré techniques

摘要: Abstract It has previously been demonstrated that the configuration of imaged atoms on surface a field-ion emitter may be interpreted as moire pattern. As consequence it becomes possible to relate structure each plane in image number other planes, by means ring counting procedures, and hence obtain precise quantitative information concerning geometry. Here is shown how analysis applied an understanding various planar facets develop, determination relative field evaporation rates different measurement more accurate values local radius.