作者: Manish Kumar , Long Wen , Jeon Geon Han , None
DOI: 10.1016/J.VACUUM.2017.03.002
关键词:
摘要: Abstract Novel designs of magnetron sputtering sources provide desired control over plasma parameters for efficient use mass and energy transport during the deposition thin films. Here, a cup-like source, comprising base cylinder part, is developed diagnosed transparent conductive Al doped ZnO The coupling or/and parts, applied power working pressure are systematically varied consequent effects on density, electron temperature, substrate temperature studied. sensitive optical emission absorption spectroscopic results plasmas reveal that source mainly delivers Zn ionic species whereas induces higher ion-electron recombination lowering temperature. present capable producing films with resistivity in range 5 × 10−2 Ωcm to 12.1 process throughput close 40 nm/min under conditions induced ≤60 °C. obtained values have promising applications flexible electronics.