New Transparent Conducting Al-doped ZnO Film Preparation Techniques for Improving Resistivity Distribution in Magnetron Sputtering Deposition

摘要: For the purpose of substituting transparent conducting Al-doped ZnO (AZO) thin films for indium–tin-oxide (ITO) electrodes, investigations have been conducted to improve resistivity distribution using magnetron sputtering techniques. New techniques, such as adding an rf (13.56 MHz) component dc depositions with or without introduction hydrogen gas into deposition chamber, resulted in a considerable improvement distribution. A low 5 ×10-4 Ω cm and more uniform on substrate surface were obtained AZO prepared thickness 200 nm glass substrates at temperature °C.