Polarized photoluminescence from partial dislocations in 4H-SiC
作者： Rii Hirano , Michio Tajima , Hidekazu Tsuchida , Kohei M. Itoh , Koji Maeda
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.778-780.319
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摘要: Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. After expansion Shockley stacking faults high-power laser irradiation, PL PDs tilted 6° their Burgers vector (6°-PDs) was observed with almost the same peak energy as that 30°-Si (g) PDs. The and 6°-PDs which were mobile under illumination both found to be polarized perpendicular dislocation lines. In contrast, immobile 30°-C(g) not polarized. present results suggest carriers bound anisotropic wave functions those 30°-C(g)PDs isotropic functions.
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Matthew P. Peloso, Bram Hoex, Armin G. Aberle, Polarization analysis of luminescence for the characterization of silicon wafer solar cells Applied Physics Letters. ,vol. 98, pp. 171914- ,(2011) , 10.1063/1.3584857
Hiroki Sugimoto, Michio Tajima, Photoluminescence Imaging of Multicrystalline Si Wafers during HF Etching Japanese Journal of Applied Physics. ,vol. 46, pp. L339- L341 ,(2007) , 10.1143/JJAP.46.L339
Yutaka Ohno, Ichiro Yonenaga, Kotaro Miyao, Koji Maeda, Hidekazu Tsuchida, In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation Applied Physics Letters. ,vol. 101, pp. 042102- ,(2012) , 10.1063/1.4737938
S. Ha, M. Benamara, M. Skowronski, H. Lendenmann, Core structure and properties of partial dislocations in silicon carbide p-i-n diodes Applied Physics Letters. ,vol. 83, pp. 4957- 4959 ,(2003) , 10.1063/1.1633969
Kendrick X. Liu, Robert E. Stahlbush, Serguei I. Maximenko, Joshua D. Caldwell, Differences in emission spectra of Si- and C-core partial dislocations Applied Physics Letters. ,vol. 90, pp. 153503- ,(2007) , 10.1063/1.2721139
M. Skowronski, J. Q. Liu, W. M. Vetter, M. Dudley, C. Hallin, H. Lendenmann, Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes Journal of Applied Physics. ,vol. 92, pp. 4699- 4704 ,(2002) , 10.1063/1.1505994
A. Galeckas, J. Linnros, P. Pirouz, Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias Applied Physics Letters. ,vol. 81, pp. 883- 885 ,(2002) , 10.1063/1.1496498
A. Galeckas, J. Linnros, P. Pirouz, Recombination-induced stacking faults : Evidence for a general mechanism in hexagonal SiC Physical Review Letters. ,vol. 96, pp. 025502- 025502 ,(2006) , 10.1103/PHYSREVLETT.96.025502
Nadeemullah A. Mahadik, Robert E. Stahlbush, Joshua D. Caldwell, Karl D. Hobart, Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers Materials Science Forum. pp. 391- 394 ,(2012) , 10.4028/WWW.SCIENTIFIC.NET/MSF.717-720.391
Peder Bergman, H. Lendenmann, Per Åke Nilsson, Ulf Lindefelt, P. Skytt, Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes Materials Science Forum. pp. 299- 302 ,(2001) , 10.4028/WWW.SCIENTIFIC.NET/MSF.353-356.299