In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation
作者： Yutaka Ohno , Ichiro Yonenaga , Kotaro Miyao , Koji Maeda , Hidekazu Tsuchida
DOI: 10.1063/1.4737938
关键词: Condensed matter physics 、 Stacking-fault energy 、 Partial dislocations 、 Slip (materials science) 、 Irradiation 、 Electron beam processing 、 Stacking 、 Transmission electron microscopy 、 Electron 、 Materials science
摘要: Electron-radiation-enhanced glide of 30°-Si(g) partial dislocations bringing about an expansion/shrinkage Shockley-type stacking faults in 4H-SiC was observed in-situ by transmission electron microscopy. Geometrical kinks on partials did not migrate the dark, indicating that kink migration is enhanced irradiation. The direction reversible depending irradiation intensity, which can be interpreted terms a sign reversal driving force originating effective fault energy variable with intensity.
scitation.org
harvard.edu
elsevier.com
osti.gov
aip.org
sci-hub.se 参考文章(17)
Joshua D. Caldwell, Robert E. Stahlbush, Karl D. Hobart, Orest J. Glembocki, Kendrick X. Liu, Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing Applied Physics Letters. ,vol. 90, pp. 143519- ,(2007) , 10.1063/1.2719650
H. Idrissi, G. Regula, M. Lancin, J. Douin, B. Pichaud, Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending Physica Status Solidi (c). ,vol. 2, pp. 1998- 2003 ,(2005) , 10.1002/PSSC.200460544
Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Tomonori Nakamura, Koji Nakayama, Ryousuke Ishii, Yoshitaka Sugawara, Annealing effects on single Shockley faults in 4H-SiC Applied Physics Letters. ,vol. 89, pp. 062104- ,(2006) , 10.1063/1.2234740
Koji Maeda, Rii Hirano, Yuki Sato, Michio Tajima, Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC Materials Science Forum. ,vol. 725, pp. 35- 40 ,(2012) , 10.4028/WWW.SCIENTIFIC.NET/MSF.725.35
M. Yamaguchi, M. Kopecka, Ultrastructural disorder of the secretory pathway in temperature-sensitive actin mutants of Saccharomyces cerevisiae Journal of Electron Microscopy. ,vol. 59, pp. 141- 152 ,(2010) , 10.1093/JMICRO/DFP050
J.W. Steeds, Orientation dependence of near-threshold damage production by electron irradiation of 4H SiC and diamond and outward migration of defects Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 269, pp. 1702- 1706 ,(2011) , 10.1016/J.NIMB.2010.12.029
S. Ha, M. Benamara, M. Skowronski, H. Lendenmann, Core structure and properties of partial dislocations in silicon carbide p-i-n diodes Applied Physics Letters. ,vol. 83, pp. 4957- 4959 ,(2003) , 10.1063/1.1633969
S. Ha, M. Skowronski, J. J. Sumakeris, M. J. Paisley, M. K. Das, Driving force of stacking-fault formation in SiC p-i-n diodes. Physical Review Letters. ,vol. 92, pp. 175504- ,(2004) , 10.1103/PHYSREVLETT.92.175504
M. Skowronski, J. Q. Liu, W. M. Vetter, M. Dudley, C. Hallin, H. Lendenmann, Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes Journal of Applied Physics. ,vol. 92, pp. 4699- 4704 ,(2002) , 10.1063/1.1505994
A. Galeckas, J. Linnros, P. Pirouz, Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias Applied Physics Letters. ,vol. 81, pp. 883- 885 ,(2002) , 10.1063/1.1496498