Room-temperature yield and fracture strength of single-crystalline 6H silicon carbide

摘要: Silicon carbide (SiC) has excellent physical and electrical properties with potential for nuclear applications power semiconductors. The of SiC, however, have not been fully determined. One property in question is the critical resolved shear stress (CRSS) slip at room temperature. Here we evaluated CRSS 6H-SiC using micro-compression tests. Single-crystalline micro-pillars were fabricated on surface a 6H-SiC(0001) wafer. Brittle fracture occurred all micro-pillars. compressive strength material was determined to be near 24 GPa. Micro-pillars also tilted specimen, facilitate basal plane hexagonal close-packed structure. Plastic deformation observed below 0.49 μm diameter. Cross-sectional TEM observation compressed showed clear traces dislocations {0001} planes. 9.8 ± 0.69 GPa from measured stress–strain curves sample geometry. here compared that first-principle calculations reported literature.