Orientation dependence of near-threshold damage production by electron irradiation of 4H SiC and diamond and outward migration of defects
作者： J.W. Steeds
DOI: 10.1016/J.NIMB.2010.12.029
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摘要: Abstract Low temperature photoluminescence measurements have been made on samples of 4H SiC and diamond irradiated in different crystallographic directions with electrons having energies close to the atomic displacement thresholds. The defects produced are found show some differences from those predicted by molecular dynamics calculations possible reasons for discussed. discussion refers results earlier as well new experiments outward migration during irradiation. energy dependence damage introduced into , oriented evaluated shown be consistent theory.
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