Transition metal dichalcogenides: structural, optical and electronic property tuning via thickness and stacking
作者： Juan Xia , Jiaxu Yan , Ze Xiang Shen
DOI: 10.1016/J.FLATC.2017.06.007
关键词:
摘要: Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted intense interests owing to their fascinating physical properties and potential applications. In addition, the of few-layer TMD materials can be tuned by thickness as well stacking sequence. For instance, MoS2/WS2/MoSe2/WSe2 undergoes a from indirect-band-gap direct-band-gap semiconductors with reduced monolayer; weak van der Waals (vdWs) interaction between layers in TMDs endows various sequences that facilely obtained different methods. Hence, sequence used modulate electronic band structures, valley polarization nonlinear optical properties, providing additional useful convenient ways manipulate fabricate devices novel functionalities. Here we review recent progress engineering for structural, properties. Last, offer our perspectives challenges this research field.
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