Transport modeling of Py film with antidot array

作者: J. Guo , M. B. A. Jalil

DOI: 10.1063/1.1557364

关键词:

摘要: We present a model to investigate the lateral transport and anisotropic magnetoresistance (AMR) of permalloy film, with two-dimensional array unfilled holes (antidots). The current density distribution j is first obtained numerically by solving Poisson equation in absence B field, while magnetization M film calculated via micromagnetics. distributions are linearly interpolated through sample, then combined self-consistent scheme obtain galvanomagnetic effects (normal planar Hall effects), which affect direction. overall AMR evaluated from parallel contributions resulting paths. Modifying geometry reducing antidot spacing results an increase peak ratio, may be explained inhomogeneous alignment induced antidots.

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