Transfer free graphene growth on SiO 2 substrate at 250 °C

摘要: Low-temperature growth, as well the transfer free growth on substrates, is major concern of graphene research for its practical applications. Here we propose a simple method to achieve SiO2 covered Si (SiO2/Si) substrate at 250 °C based solid-liquid-solid reaction. The key this approach catalyst metal, which not popular by chemical vapor deposition. A metal film 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. sample then annealed under vacuum condition. Raman spectra measured after removal etching showed intense G and 2D peaks together with small D related peaks, confirming multilayer SiO2/Si. domain size confirmed optical microscope atomic force about 5 μm in average. Thus, will open up new route low temperatures.