Dielectric properties of GeSbSe glasses prepared by the conventional melt-quenching method
作者： N. Nedelcu , V. Chiroiu , C. Rugină , L. Munteanu , R. Ioan
DOI: 10.1016/J.RINP.2019.102856
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摘要: Abstract We report on the dielectric properties of chalcogenide ternary GexSb40−xSe60 glasses with composition x = 12, 25, 30 at%. By combining Swanepoel method a formalism based Hilliard theory surface tension, linear constants and third-order optical susceptibility are predicted. The synthesized from elements 5N purity (Ge, Sb, Se) by conventional melt-quenching method. mixture was sealed into quartz ampoules after evacuation down to pressure 10−3 Pa, in rotary furnace for 24 h at 950 °C.
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