An electron diffraction study of the structure of silicon (100)

摘要: Abstract The (100) surface of silicon has been studied by low-energy electron diffraction and a preferred model its atomic arrangement is proposed. A clean, well ordered, reproducible was prepared repeated heating to 1250°C, annealing at 900°C, cooling less than l° C sec . This reconstructed from the bulk structure c(4 × 2) unit mesh. diffracted intensity consists Bragg maxima expected secondary peaks whose properties suggest they are due selvedge. data averaged constant momentum transfer extract quasikinematic intensity. magnitude width selvedge extends three five layers into material. No previously proposed consistent with data. which gives reasonable fit alternate rows atoms in each outermost two planes removed, exposes small facets (111) surface. Then, third layer displaced — half moving plane their back-bonding neighbors other making orthogonal back bonds. Additionally, there outward displacements first layers. can be rationalized arguments W.A. Harrison rehybridization major contribution energy reconstruction.