The effect of the oxygen concentration and the rf power on the zinc oxide films properties deposited by magnetron sputtering
作者： I. Sayago , M. Aleixandre , L. Arés , M.J. Fernández , J.P. Santos
DOI: 10.1016/J.APSUSC.2004.10.035
关键词:
摘要: Abstract The influence of the oxygen concentration and rf power variation on zinc oxide films structural properties were studied. ZnO deposited silicon substrate by magnetron sputtering in reactive plasma using a target. Crystalline structures roughness characteristics investigated X-ray diffraction (XRD) atomic force microscopy (AFM) measurements, respectively. Deposition conditions optimized to obtain good quality suitable for fabrication surface acoustic wave (SAW) devices. optimal parameters piezoelectric material have been: 50 W plasma.
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