Observation of the metallic-type selective etching of single walled carbon nanotubes by real-time in situ two-laser Raman spectroscopy

摘要: Abstract Real time, in situ Raman spectroscopy with two simultaneously incident laser excitation wavelengths is used to investigate the dynamics of single-walled carbon nanotube etching. For source material, nanotubes diameter ∼1.4 nm, a 532 nm resonant semiconducting and 633 nm metallic nanotubes. Changes population are tracked separately simultaneously. In oxygen, metals consistently etch faster than semiconductors, all rates increase process temperature defect density material. A similar evolution observed dioxide. Simultaneous two-color provides information beyond standard can be effective as an instantaneous measure metallicity for